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Impacts of size and cross-sectional shape on surface lattice constant and electron effective mass of silicon nanowires
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10.1063/1.3103366
/content/aip/journal/apl/94/11/10.1063/1.3103366
http://aip.metastore.ingenta.com/content/aip/journal/apl/94/11/10.1063/1.3103366
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Schematic diagrams of the tri-SiNWs and rect-SiNWs used in our calculations. The blue dotted lines represent the virtual cages used to construct the SiNWs. Si and H atoms are represented in yellow and gray, respectively.

Image of FIG. 2.
FIG. 2.

The surface lattice constant vs the transverse dimension of SiNWs. is the calculated lattice constant of bulk silicon.

Image of FIG. 3.
FIG. 3.

(a) Energy band structure for tri-SiNWs with cross-sectional area . (b) Energy band structure for rect-SiNWs with . In [(a) and (b)], the valence band maximum has been shifted to zero. (c) The lowest CBM for tri-SiNWs with different transverse dimensions. (d) The lowest CBM for rect-SiNWs with different transverse dimensions. In [(c) and (d)], the CBM has been shifted to zero. The symbols are DFTB simulation results and the solid lines are the best-fit ones with parabolic approximation.

Image of FIG. 4.
FIG. 4.

The electron effective mass vs the transverse cross-sectional area for tri- and rect-SiNWs. is the mass of free electron.

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/content/aip/journal/apl/94/11/10.1063/1.3103366
2009-03-20
2014-04-19
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Impacts of size and cross-sectional shape on surface lattice constant and electron effective mass of silicon nanowires
http://aip.metastore.ingenta.com/content/aip/journal/apl/94/11/10.1063/1.3103366
10.1063/1.3103366
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