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Control performance of a single-chip white light emitting diode by adjusting strain in InGaN underlying layer
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10.1063/1.3103559
/content/aip/journal/apl/94/11/10.1063/1.3103559
http://aip.metastore.ingenta.com/content/aip/journal/apl/94/11/10.1063/1.3103559
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

EL spectra of (a) sample A, peaked at 436 and 545 nm, (b) sample B, peaked at 441, 494, and 563 nm, and (c) sample C, peaked at 443, 496, and 576 nm.

Image of FIG. 2.
FIG. 2.

X-ray RSM of the (105) reflection for (a) sample A, (b) sample B, and (c) sample C. Two diffraction peaks correspond to GaN and InGaN UL, respectively. Dashed lines guide diffraction peak positions of the completely relaxed and strained InGaN alloys. (c) is cited from Ref. 10 .

Image of FIG. 3.
FIG. 3.

Cross-sectional TEM images of InGaN MQWs active layer grown on different InGaN ULs. They are (a) sample A, (b) sample B, and (c) sample C. In (b) and (c) In-rich QDs are seen clearly.

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/content/aip/journal/apl/94/11/10.1063/1.3103559
2009-03-20
2014-04-25
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Control performance of a single-chip white light emitting diode by adjusting strain in InGaN underlying layer
http://aip.metastore.ingenta.com/content/aip/journal/apl/94/11/10.1063/1.3103559
10.1063/1.3103559
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