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SEM images of uncoalesced AlN growths on patterned sapphire templates with a 25/5 pattern and stripes directed in the (a) and (b) sapphire directions. Both scans were taken with the samples tilted 10° from cross-section. The crystallographic directions of the sapphire substrates are indicated.
SEM images of AlN growths on patterned sapphire substrates with stripes directed in the sapphire direction: (a) an uncoalesced 12 min growth on a 10/2 template and (b) a coalesced 22 min growth on a 10/5 template. In part (a) the sample is tilted at 15° from cross-section. In part (b) the sample is shown in cross-section. The different growth regions are labeled as follows: (1) trench growth, (2) sidewall growth, and (3) growth from the top of the stripe including seed and lateral growth (wing). The crystallographic directions of the sapphire substrates are indicated.
Dark field TEM image of a coalesced AlN LEO film on a patterned sapphire template with a 10/2 pattern and stripes directed in the sapphire direction. This image was obtained using multiple beam illumination in the zone axis to reveal TDs with both screw and edge character.
Montage of AFM scans of a MOCVD AlN film grown on a chemically mechanically polished HVPE AlN LEO template (10/2 pattern, sapphire stripe direction) with seed and wing regions indicated. Wing, seed, and coalescence (labeled “X”) regions are indicated.
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