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Growth rate per cycle as a function of exposure time to each molecular precursor. While varying the exposure time of the alternate precursor, 10 and 1 s exposures to and were used, respectively.
SEM images of 54, 162, and 500 cycles deposited by ALD, panels [(a)–(c)], respectively. (d) Cross-sectional view of a conformal film resulting from 500 cycles on a Si trench wafer.
XRD pattern of 500 cycle chalcocite film on fused silica indexed to (Ref. 22).
Absorbance per cycle of grown by 52, 162 (measured after aging in ambient overnight) and 500 ALD cycles (measured within 1 h), solid lines. The reproduction of polarization-averaged absorption coefficients (dotted lines, see Ref. 24) are shown scaled for comparison to the corresponding ALD sample.
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