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Temperature dependence of zero bias resistance for the Fe/Si Schottky (open symbols) and for the diodes with -type doping of (solid circles) and (solid squares).
EL spectra from and Fe/Si Schottky contacts at analyzed for and at (a) and (b) .
Magnetic field dependence of for the TA-feature at (squares) and the TO at (circles) for the (closed symbols) and the Fe/Si Schottky samples (open symbols). consistently tracks the out-of-plane magnetization of the Fe (solid line). Triangles represent the circular polarization from the reference sample with nonmagnetic contacts.
High resolution TEM images of (a) the interface, (b) the bcc-Fe area of the Fe/Si Schottky interface, and (c) the area of the Fe/Si Schottky interface. FFTs are shown as insets.
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