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Electrical spin injection into Si: A comparison between Fe/Si Schottky and tunnel contacts
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10.1063/1.3099049
/content/aip/journal/apl/94/12/10.1063/1.3099049
http://aip.metastore.ingenta.com/content/aip/journal/apl/94/12/10.1063/1.3099049
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Temperature dependence of zero bias resistance for the Fe/Si Schottky (open symbols) and for the diodes with -type doping of (solid circles) and (solid squares).

Image of FIG. 2.
FIG. 2.

EL spectra from and Fe/Si Schottky contacts at analyzed for and at (a) and (b) .

Image of FIG. 3.
FIG. 3.

Magnetic field dependence of for the TA-feature at (squares) and the TO at (circles) for the (closed symbols) and the Fe/Si Schottky samples (open symbols). consistently tracks the out-of-plane magnetization of the Fe (solid line). Triangles represent the circular polarization from the reference sample with nonmagnetic contacts.

Image of FIG. 4.
FIG. 4.

High resolution TEM images of (a) the interface, (b) the bcc-Fe area of the Fe/Si Schottky interface, and (c) the area of the Fe/Si Schottky interface. FFTs are shown as insets.

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/content/aip/journal/apl/94/12/10.1063/1.3099049
2009-03-25
2014-04-18
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Electrical spin injection into Si: A comparison between Fe/Si Schottky and Fe/Al2O3 tunnel contacts
http://aip.metastore.ingenta.com/content/aip/journal/apl/94/12/10.1063/1.3099049
10.1063/1.3099049
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