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Scalable implementation of strongly coupled cavity-quantum dot devices
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10.1063/1.3100781
/content/aip/journal/apl/94/12/10.1063/1.3100781
http://aip.metastore.ingenta.com/content/aip/journal/apl/94/12/10.1063/1.3100781
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(a) Schematic setup for the in situ lithography. (b) Measured quality factors vs pillar radius obtained with two different in situ lithography processes (red circle and green triangle) and an e-beam lithography process (black square). Inset: SEM image of the pillars obtained through in situ optical lithography.

Image of FIG. 2.
FIG. 2.

PL measurements performed on pillar 1 of radius radius pillar. (a) Energies of the emission lines vs temperature. (b) Recorded PL spectrums (points) for the high energy anticrossing as a function of temperature, as well as the Lorentzian fit to the lines.

Image of FIG. 3.
FIG. 3.

[(a)–(d)] Energies of the emission lines as a function of temperature for four pillars. [(e) and (f)] Statistics on the half mode line width , the coupling constant and the ratio measured for the 14 anticrossings.

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/content/aip/journal/apl/94/12/10.1063/1.3100781
2009-03-23
2014-04-19
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Scalable implementation of strongly coupled cavity-quantum dot devices
http://aip.metastore.ingenta.com/content/aip/journal/apl/94/12/10.1063/1.3100781
10.1063/1.3100781
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