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High piezoelectricity of -based ternary compound thin films on silicon substrates
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10.1063/1.3103553
/content/aip/journal/apl/94/12/10.1063/1.3103553
http://aip.metastore.ingenta.com/content/aip/journal/apl/94/12/10.1063/1.3103553

Figures

Image of FIG. 1.
FIG. 1.

SEM image of PMnN-PZT film: (a) surface and (b) cross section.

Image of FIG. 2.
FIG. 2.

XRD spectrum: (a) PZT film and (b) PMnN-PZT film.

Image of FIG. 3.
FIG. 3.

Ferroelectricity measured at 1 kHz: (a) hysteretic loop and (b) relative dielectric constant change with temperature.

Image of FIG. 4.
FIG. 4.

Piezoelectric response of film/substrate cantilever measured at (a) 500 Hz and 1 kHz. (b) Resonance frequency .

Tables

Generic image for table
Table I.

Structure of PZT-based material.

Generic image for table
Table II.

Characterization of PZT-based film.

Generic image for table
Table III.

Parameter of film/substrate cantilever.

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/content/aip/journal/apl/94/12/10.1063/1.3103553
2009-03-27
2014-04-20
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: High piezoelectricity of Pb(Zr,Ti)O3-based ternary compound thin films on silicon substrates
http://aip.metastore.ingenta.com/content/aip/journal/apl/94/12/10.1063/1.3103553
10.1063/1.3103553
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