1887
banner image
No data available.
Please log in to see this content.
You have no subscription access to this content.
No metrics data to plot.
The attempt to load metrics for this article has failed.
The attempt to plot a graph for these metrics has failed.
Reliability analysis of the low resistance state stability of based solid electrolyte nonvolatile memory cells
Rent:
Rent this article for
USD
10.1063/1.3103555
/content/aip/journal/apl/94/12/10.1063/1.3103555
http://aip.metastore.ingenta.com/content/aip/journal/apl/94/12/10.1063/1.3103555
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Resistance evolution of a memory cell under a current stress of at room temperature.

Image of FIG. 2.
FIG. 2.

Weibull plots of the cumulative time-to-switch off distributions for memory cells with a 70 nm film at different constant current stresses. The inset shows the MTF as a function of current stress to determine the current exponent .

Image of FIG. 3.
FIG. 3.

Weibull plots of the cumulative time-to-switch off distributions for memory cells with a 70 nm thin film at different temperatures (constant current stress: ). The inset shows the Arrhenius plot for the MTF .

Image of FIG. 4.
FIG. 4.

Weibull plots of the cumulative time-to-switch off distributions for memory cells with different active layer thicknesses at room temperature (constant current stress: ).

Loading

Article metrics loading...

/content/aip/journal/apl/94/12/10.1063/1.3103555
2009-03-26
2014-04-19
Loading

Full text loading...

This is a required field
Please enter a valid email address
752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Reliability analysis of the low resistance state stability of Ge0.3Se0.7 based solid electrolyte nonvolatile memory cells
http://aip.metastore.ingenta.com/content/aip/journal/apl/94/12/10.1063/1.3103555
10.1063/1.3103555
SEARCH_EXPAND_ITEM