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Nucleation mechanism of dislocation half-loop arrays in -silicon carbide homoepitaxial layers
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10.1063/1.3105944
/content/aip/journal/apl/94/12/10.1063/1.3105944
http://aip.metastore.ingenta.com/content/aip/journal/apl/94/12/10.1063/1.3105944
/content/aip/journal/apl/94/12/10.1063/1.3105944
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/content/aip/journal/apl/94/12/10.1063/1.3105944
2009-03-25
2014-07-12
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Nucleation mechanism of dislocation half-loop arrays in 4H-silicon carbide homoepitaxial layers
http://aip.metastore.ingenta.com/content/aip/journal/apl/94/12/10.1063/1.3105944
10.1063/1.3105944
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