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Nucleation mechanism of dislocation half-loop arrays in -silicon carbide homoepitaxial layers
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View: Figures


Image of FIG. 1.
FIG. 1.

(a) UVPL image of a HLA (the array of dots along the line DC) before extended UV exposure. The HLA is connected to the mobile threading segment of the BPD at C. The interfacial segment of BPD is along AB. (b) Magnified view of boxed area in (a) after extended UV exposure; the inset shows the result of further fault expansion in the boxed area of (b). (c) Schematic diagram sequence showing the evolution of the rhombic shaped faults during dissociation. In (i), the initial BPD segment runs between the two TEDs at I and II. In (ii), the BPD dissociates in the form of two inclined and two vertical segments of mobile, Si-core, 30° partial. In (iii), further expansion requires the creation of two inclined and two vertical segments of immobile, C-core, 30° partial. (d) Schematic of the annihilation process that occurs as the Si-core partials from one element in the HLA meet the C-core partials from the adjacent element [see also the inset of (b)]. This indicates that all of the partials are on the exact same basal plane.

Image of FIG. 2.
FIG. 2.

Schematics showing Shockley partial dislocations of different core structures dissociated from a perfect BPD. (a) Partial dislocation core structure for various angles between the Burgers vector, , and line direction, , of the perfect BPD, defining regions I–IV; (b) Region I: , the BPD is dissociated into two Si-core partials; (c) , the BPD is dissociated into two C-core partials; (d) , one Si core and one C core; (e) , one Si core and one C core. is defined in the inset of (a).

Image of FIG. 3.
FIG. 3.

Schematic diagram showing the formation mechanism of a HLA. [(a)–(e)] sequential stages in the process; (f) summary of process. The lighter shaded planes in (a)–(f) indicate the basal plane on which the BPD lies in the substrate, while the darker one lies in the epilayer. See text for details of mechanism.


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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Nucleation mechanism of dislocation half-loop arrays in 4H-silicon carbide homoepitaxial layers