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(a) Schematic diagram of the ink-jet printing of regular arrays of Ni dots on the layer. (b) Optical micrograph of ink-jet printed regular arrays of Ni dots.
MILC of using ink-jet printed Ni as a catalyst. (a) Selective crystallization of from the printed Ni dots. (b) Completion of the lateral crystallization of . The corresponding right figures show schematic diagrams of the crystallization behavior. (c) Fabricated TFTs on the crystallized Si. The scale bar in (a) is and all polarized optical microscopy images were taken at the same magnification.
Transfer characteristics of the -channel poly-Si TFTs by ink-jet printed Ni as a catalyst. characteristics of the MILC TFTs with a channel width/length of (a) and (b) . (c) Comparison of the characteristics of MILC TFT devices formed by Ni catalyst using conventional photolithography and ink-jet printing techniques. Both TFTs have a channel length/width of and the transfer curves were obtained at the same drain bias of 10 V.
Schematic diagram of the ink-jet printed Ni dot positions in TFT device arrays and comparison of the characteristics of MILC TFT devices according to the Ni dot positions. Both TFTs have a channel length/width of and the transfer curves were obtained at the same drain bias of 10 V.
Device parameters of the TFTs using an ink-jet printing method and conventional MILC processes.
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