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(a) Scanning electron microscope image of the junction region. The -gate (-gate) is visible on the left (right). The other two features are the lateral gates. (b) Schematic picture of the device. (c) characteristics of the -part of the device at a temperature of 5 K. Curves are taken at different voltages, from 0 to 0.5 V, applied to the -gate. Inset: characteristic of the -type region of the device. The -gate was kept grounded.
(a) -drain (solid) and -drain (dashed) current as a function of the IDT excitation frequency at different excitation power levels when a fixed current of −5 nA (5 nA) was injected into the source. Out of resonance the carriers injected from the sources reach the drains of the same type. At resonance electron transport from the to the part is observed. (b) SAW driven transport as a function of the bias applied to the LGs. The IDT was excited at resonance (3.018 GHz) at a power of 18 dBm. Complete pinchoff of the current was observed both for positive and negative bias values.
EL intensity as a function of the SAW-driven current. A linear dependence of the EL on the current was observed. Inset: fraction of electron steered toward the -region as a function of the -source current. The IDT was excited at resonance (3.018 GHz) at a power of 18 dBm.
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