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(a) The top-view SEM image of PhCs on FTLED with the lattice constant and the diameter of air holes fabricated with the holography lithography. Inset: the cross-section TEM image shows the PhC depth . (b) The optical micrography showing the blue light distribution across the die operated at low injection current 5 mA. (c) Schematic diagram of the GaN FTLED structure with PhC.
Free photon band structure calculated with for the TE modes. The red thick lines indicate the collinear coupled modes. The red dash lines indicated the noncollinear coupled bands. The air lines are shown in gray dashed lines. The boxes indicate the experiment regions observed with , 350, and 400 nm.
(a) Light output power-current curve characteristic of GaN FTLED with PhC and without PhC. The far-field pattern shows the different direction (b) and (c) with PhC at driving current of 50 mA.
The map of intensity of the extracted light at a fixed wavelength . The wavelength was kept at a constant corresponding to (a) , (b) , and (c) , respectively. Inset: the tittles show Bragg’s diffraction theory fitting with effective refractive index (cyan X of direction, green O of direction, and blue ◻ of direction). The top view of 3D far-field pattern shows three different value (d) 290 nm, (e) 350 nm, and (f) 400 nm, respectively.
Light enhancement recorded at various output collection angle for GaN PhC FTLEDs with three different .
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