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Mean TMR value vs RA for the four MgO barrier thicknesses [(panel a), and hysteresis loop and the corresponding SMT switching curve for a typical device (panel b).
curves in the P and AP configurations for a device exhibiting a typical hard dielectric breakdown.
Total Joule heat generated prior to breakdown as a function of MgO barrier thickness for the P and AP magnetic configurations.
Exponential dependence between mean RA product and breakdown voltage.
Margin of bias voltage between switching voltage and breakdown voltage in a nanopillar whose magnetization is switched by the SMT effect.
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