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Dielectric breakdown of MgO magnetic tunnel junctions
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10.1063/1.3109792
/content/aip/journal/apl/94/12/10.1063/1.3109792
http://aip.metastore.ingenta.com/content/aip/journal/apl/94/12/10.1063/1.3109792
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Mean TMR value vs RA for the four MgO barrier thicknesses [(panel a), and hysteresis loop and the corresponding SMT switching curve for a typical device (panel b).

Image of FIG. 2.
FIG. 2.

curves in the P and AP configurations for a device exhibiting a typical hard dielectric breakdown.

Image of FIG. 3.
FIG. 3.

Total Joule heat generated prior to breakdown as a function of MgO barrier thickness for the P and AP magnetic configurations.

Image of FIG. 4.
FIG. 4.

Exponential dependence between mean RA product and breakdown voltage.

Image of FIG. 5.
FIG. 5.

Margin of bias voltage between switching voltage and breakdown voltage in a nanopillar whose magnetization is switched by the SMT effect.

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/content/aip/journal/apl/94/12/10.1063/1.3109792
2009-03-26
2014-04-18
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Dielectric breakdown of MgO magnetic tunnel junctions
http://aip.metastore.ingenta.com/content/aip/journal/apl/94/12/10.1063/1.3109792
10.1063/1.3109792
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