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High temperature cavity polaritons in epitaxial on silicon
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10.1063/1.3109791
/content/aip/journal/apl/94/13/10.1063/1.3109791
http://aip.metastore.ingenta.com/content/aip/journal/apl/94/13/10.1063/1.3109791
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(a) Optical image of a spoked microdisk. (b) Visible upconversion luminescence shows the spatial profile of a fundamental mode and additional scattering where the spokes attach to the ring. (c) Scanning electron micrograph showing the smooth edge of an undercut microdisk. (d) Electric-field profile of the first- and second-order radial modes calculated using the finite element method.

Image of FIG. 2.
FIG. 2.

Schematic layout for pump-probe measurements.

Image of FIG. 3.
FIG. 3.

(a) Normalized probe transmission and (b) PL as a function of wavelength and pump power. To compensate for upconversion effects, the PL spectra are normalized to give a constant value for the peak near 1525 nm. (c) Comparison of measured resonance wavelengths, the coupled-oscillator eigenvalues (solid lines), and the uncoupled transition and cavity responses (dashed lines). The device temperature is inferred from the bare cavity mode detuning and a constant tuning rate of 9.7 pm/K. (d) Transmission for two devices tuned on and off resonance with the transitions; a sample fit is also included. [(e) and (f)] Linewidth averaging of the polariton modes.

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/content/aip/journal/apl/94/13/10.1063/1.3109791
2009-04-01
2014-04-25
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: High temperature cavity polaritons in epitaxial Er2O3 on silicon
http://aip.metastore.ingenta.com/content/aip/journal/apl/94/13/10.1063/1.3109791
10.1063/1.3109791
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