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(a) Schematic of the QP structure and measured indium concentration in %. (b) Cross sectional TEM of two QPs. The two QDs at each ends of the QPs have an indium concentration of around 45%–48%. (c) Schematic view of a QP oxide apertured micropillar cavity laser. (d) SEM image after processing the ring and pad metal contacts.
Characteristics of QP device with diameter aperture. (a) curve at 7 K. Threshold current is . The inset shows the linewidth of the fundamental cavity mode as a function of injection current. (b) curves at various temperatures. (c) Lasing spectra in log scale at 7 K, (, black), and (, red). (d) Lasing threshold current and differential quantum efficiency as a function of temperature.
Comparison of the QD and QP device characteristics: lasing threshold currents as a function of temperature in (a) QP devices, (b) QD devices, (c) normalized QD (red) and QP (blue) PL spectra of calibration samples at 4 K pumped by a CW HeNe laser with pump power. The cavity mode wavelengths of laser devices at 4 K are indicated with the red bar (QD devices) and blue bar (QP devices).
Log-log plot of the measured light intensity as a function of injection current for QP devices with diameter (black data points), diameter (red data points) and diameter (blue data points) apertures. The fit curves are calculated with Eq. (1) for various numbers of .
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