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186 K operation of terahertz quantum-cascade lasers based on a diagonal design
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View: Figures


Image of FIG. 1.
FIG. 1.

Conduction band diagram at (a) the operating bias and (b) a lower (parasitic) bias as characterized by the and the alignments, respectively. is the injector level from the preceding module and the radiative transition is from . Starting from the injector barrier, the layer thicknesses in nanometer are 4.8/8.5/2.8/8.5/4.2/16.4, with the barriers indicated in bold fonts.

Image of FIG. 2.
FIG. 2.

Some characteristic calculations for the three-well structure in Fig. 1(a) when it is designed with varying levels of diagonality (as characterized by ) while keeping all other parameters the same. The various symbols and terms in the plots are described in the body text.

Image of FIG. 3.
FIG. 3.

(a) Pulsed (100 ns pulses repeated at 10 kHz) light-current and current-voltage characteristics from a ridge laser that lased up to 185 K. The inset shows some representative spectra at 9 and 185 K. The ’s and the spectra were recorded with a He-cooled Ge:Ga photodetector and a Nicolet 850 Fourier transform spectrometer. The optical power is collected from a single facet using a Winston cone. The peak power is detected with a thermopile power meter (ScienTech, model AC2500) placed adjacent to the cryostat window without any corrections. (b) Typical vs heat-sink temperature measurement from these lasers. A fit to the commonly used expression is also indicated. The upper inset shows a scanning-electron microscope image of the cleaved facet of a wide device. The lower inset shows selected high temperature ’s for the wider device of dimensions of , which lased up to 186 K.


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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: 186 K operation of terahertz quantum-cascade lasers based on a diagonal design