Full text loading...
(a) Scanning electron micrograph showing the blowup of a V/Cu/V weak link in a typical device (sample B). (b) Sketch of the measurement setup. (c) Zero-bias resistance vs temperature for sample A.
Current vs voltage characteristics of all samples at three different representative temperatures. The curves are horizontally offset for clarity.
Critical current vs for all four devices. Full dots and dashed lines represent the switching current and the high-temperature fit, respectively. The retrapping current is also shown as open squares.
Sample parameters. The junctions total length , width , and normal-state resistance are shown. The experimental Thouless energy is determined from and the samples geometrical dimensions (Ref. 17). The superconducting gap is for all samples. and the suppression coefficient are fit parameters of Fig. 3 (see text).
Article metrics loading...