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The effect of the internal capacitance of InGaN-light emitting diode on the electrostatic discharge properties
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10.1063/1.3114974
/content/aip/journal/apl/94/13/10.1063/1.3114974
http://aip.metastore.ingenta.com/content/aip/journal/apl/94/13/10.1063/1.3114974
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Electroluminous intensities and forward voltage-current curves of S1 and S2 .

Image of FIG. 2.
FIG. 2.

Box plot of the ESD pass yield of S1 and S2 .

Image of FIG. 3.
FIG. 3.

Capacitance of S1 and S2 as a function of reverse voltage.

Image of FIG. 4.
FIG. 4.

Simplified equivalent electronic circuit for the InGaN-LED connected to the HBM-ESD simulator (: charging resistor, : discharging capacitor, : discharging resistor, : internal capacitance).

Image of FIG. 5.
FIG. 5.

HBM-ESD pass yield of S1 and S2 as a function of applied ESD voltage.

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/content/aip/journal/apl/94/13/10.1063/1.3114974
2009-04-01
2014-04-19
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: The effect of the internal capacitance of InGaN-light emitting diode on the electrostatic discharge properties
http://aip.metastore.ingenta.com/content/aip/journal/apl/94/13/10.1063/1.3114974
10.1063/1.3114974
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