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Electroluminous intensities and forward voltage-current curves of S1 and S2 .
Box plot of the ESD pass yield of S1 and S2 .
Capacitance of S1 and S2 as a function of reverse voltage.
Simplified equivalent electronic circuit for the InGaN-LED connected to the HBM-ESD simulator (: charging resistor, : discharging capacitor, : discharging resistor, : internal capacitance).
HBM-ESD pass yield of S1 and S2 as a function of applied ESD voltage.
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