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(a) TEM image of DWNT. Inset: AFM images of isolated one DWNT located between source and drain electrodes with 800 nm spacing in a FET. (b) Schematic cross section of the FET with electrode contacts to different layers.
as functions of (a) and (b) for various temperatures. Dotted line in (a) is a calculation result based on Eqs. (1) and (2). Insets of (a): schematic views of band structures in forward and reverse (−) regions (right and left, respectively). [(c) and (d)] Thermal-activation-type relationship in conductance vs temperature at in (a).
at as a function of for various magnetic fields applied perpendicular to the tube longitudinal axis.
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