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Effects of amorphous semiconductor thickness on top gate staggered organic field-effect transistors
6.L. Mariucci, D. Simeone, S. Cipolloni, L. Maiolo, A. Pecora, G. Fortunato, and S. Brotherton, Solid-State Electron. 52, 412 (2008).
10.J. Hwang and A. Kahn, Proc. SPIE 6333, 633310 (2006).
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We have investigated the influence of the semiconductor thickness varying by almost two orders of magnitude on the transfer and output characteristics of top gate staggered organic field-effect transistors. We observe that the mobility in the saturation regime is almost constant in the thickness range studied. In contrast, the subthreshold slope and the threshold voltage are highly impacted by the semiconductor thickness, and in particular they showed a common optimum thickness value. On both sides of this optimum we observe a loss in performances, which are tentatively attributed to different mechanisms.
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