Full text loading...
(a) Schematic diagram of a cross-section through the device. (b) Optical image of the Hall-bar device with a circuit diagram illustrating the setup for two-terminal measurements.
(a) Current through - (: solid lines) and -contacts (: dashed lines) at different taken with a bias of 10 mV. [(b) and (c)] Schematics of the potential required for coexistence without (b) and with (c) quantum confinement. (d) As (c) but with potential symmetrically reversed. (e) As (d) but with a bias applied to the 2D hole gas.
(a) Diagonal resistivity of the -channel as functions of magnetic field and interlayer bias applied through a -contact with gate voltages fixed at and . (b) Schematic diagram illustrating the setup used in (a). (c) Schematic diagram illustrating regions of the plane with an interlayer bias of 0.6 V. Solid lines demarcate lines of zero electron (blue) and hole (red) density, while dashed lines indicate zero density of a second subband of a given carrier-type. The central diamond-shaped region bound by four solid lines corresponds to a situation where there are no carriers in the silicon slab. [(d) and (e)] Diagonal conductivity measured with -channel contacts and -channel contacts , respectively, at , with an interlayer bias of 0.6 V. Identical points are marked by circles in (a) and (d).
[(a) and (b)] and , respectively, with no interlayer bias. [(c) and (d)] and , respectively, with an interlayer bias of 0.6 V. Solid lines represent expected lines of zero carrier density for the carrier-type being measured while dashed lines correspond to the other carrier-type.
Electron-hole drag at , . (a) . [(b) and (c)] . and agree well for marked by the vertical dotted line. Inset: Setting for measuring .
Article metrics loading...