Full text loading...
High-frequency (1 MHz) capacitance-voltage curves of capacitors with a sweep voltage range of 4 V. The samples were annealed at 500 or . The inset shows the memory windows of capacitors as a function of the sweep voltage range.
The current density-voltage characteristics of capacitors with BFO layer annealed at 500 or .
The characteristics of MFIS transistor after negative and positive poling voltage pulses. MW stands for memory window. The channel width and length were 100 and , respectively.
The drain current versus time measurement of MFIS transistor.
Article metrics loading...