1887
banner image
No data available.
Please log in to see this content.
You have no subscription access to this content.
No metrics data to plot.
The attempt to load metrics for this article has failed.
The attempt to plot a graph for these metrics has failed.
Metal-ferroelectric -insulator -semiconductor capacitors and field effect transistors for nonvolatile memory applications
Rent:
Rent this article for
USD
10.1063/1.3114403
/content/aip/journal/apl/94/14/10.1063/1.3114403
http://aip.metastore.ingenta.com/content/aip/journal/apl/94/14/10.1063/1.3114403
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

High-frequency (1 MHz) capacitance-voltage curves of capacitors with a sweep voltage range of 4 V. The samples were annealed at 500 or . The inset shows the memory windows of capacitors as a function of the sweep voltage range.

Image of FIG. 2.
FIG. 2.

The current density-voltage characteristics of capacitors with BFO layer annealed at 500 or .

Image of FIG. 3.
FIG. 3.

The characteristics of MFIS transistor after negative and positive poling voltage pulses. MW stands for memory window. The channel width and length were 100 and , respectively.

Image of FIG. 4.
FIG. 4.

The drain current versus time measurement of MFIS transistor.

Loading

Article metrics loading...

/content/aip/journal/apl/94/14/10.1063/1.3114403
2009-04-08
2014-04-25
Loading

Full text loading...

This is a required field
Please enter a valid email address
752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Metal-ferroelectric (BiFeO3)-insulator (Y2O3)-semiconductor capacitors and field effect transistors for nonvolatile memory applications
http://aip.metastore.ingenta.com/content/aip/journal/apl/94/14/10.1063/1.3114403
10.1063/1.3114403
SEARCH_EXPAND_ITEM