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Measurement and simulation of XRD rocking curves of MQWs and a Ge VS.
Room temperature photoluminescence of tensile strained MQWs and tensile strained Si-based Ge VS, as well as bulk Ge.
Temperature dependence of the luminescence peak energy of direct band transition of the MQW on Ge VS. The solid line represents the fitting of the direct band transition vs temperature according to Varshni’s law with the parameters and from bulk Ge and the photoluminescence spectra measured at 300, 330, and 360 K are shown in the inset.
The band gap structure of a tensile strained heterostructure on a Si-based Ge VS (not to scale for clear visible). and are the energy of the bottom of the conduction band at point and at the valleys, respectively. and are the energies of the tops of the light-hole and heavy-hole valence bands, respectively. , , and represent the separation energies in the conduction and valence band due to the quantum confinement effect. .
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