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Temperature dependence of Ohmic contact characteristics in AlGaN/GaN high electron mobility transistors from −50 to
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10.1063/1.3114422
/content/aip/journal/apl/94/14/10.1063/1.3114422
http://aip.metastore.ingenta.com/content/aip/journal/apl/94/14/10.1063/1.3114422
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Measured (symbols) and fitted (lines) 2DEG sheet resistances as a function of temperature from −50 to for samples 1 (on Si) and 2 (on sapphire). The inset figure shows the normalized Hall measurement data for AlGaN/GaN heterostructure on Si at the temperature from −190 to . The inset table lists the fitted values of and .

Image of FIG. 2.
FIG. 2.

Measured (symbols) and modeled (lines) specific contact resistance as a function of temperature for samples 1 (on Si) and 2 (on sapphire). The inset figure shows the energy band schematic of Ohmic metal and AlGaN/GaN. The carrier transport is divided into three regions: region I, the barrier between the Ohmic metal to modified GaN/AlGaN; region II, modified GaN/AlGaN; and region III, the barrier between modified AlGaN and 2DEG. The inset table shows the fitted values of , , and .

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/content/aip/journal/apl/94/14/10.1063/1.3114422
2009-04-08
2014-04-25
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Temperature dependence of Ohmic contact characteristics in AlGaN/GaN high electron mobility transistors from −50 to 200 °C
http://aip.metastore.ingenta.com/content/aip/journal/apl/94/14/10.1063/1.3114422
10.1063/1.3114422
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