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Morphology induced magnetoresistance enhancement of tunneling junctions with the Heusler electrode
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10.1063/1.3114425
/content/aip/journal/apl/94/14/10.1063/1.3114425
http://aip.metastore.ingenta.com/content/aip/journal/apl/94/14/10.1063/1.3114425
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

In situ STM images. (a) thin film after annealing, (b) 18 Å Al deposited on a aged surface, and (c) 18 Å Al deposited on a fresh surface.

Image of FIG. 2.
FIG. 2.

Upper image: in situ STM image of 2.5 Å Mg seed layer on a surface. Lower image: height profile along the yellow line indicated in the upper image.

Image of FIG. 3.
FIG. 3.

In situ STM images of 18 Å of rf-sputtered Al on (a) 2.5, (b) 5.0, and (c) 7.5 Å of Mg on thin films.

Image of FIG. 4.
FIG. 4.

Dependence of the TMR on the Mg layer thickness of tunneling junctions. The inset shows the magnetoresistance loop of the junction with a Mg thickness of 2.5 Å.

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/content/aip/journal/apl/94/14/10.1063/1.3114425
2009-04-06
2014-04-18
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Morphology induced magnetoresistance enhancement of tunneling junctions with the Heusler electrode Co2Cr0.6Fe0.4Al
http://aip.metastore.ingenta.com/content/aip/journal/apl/94/14/10.1063/1.3114425
10.1063/1.3114425
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