1887
banner image
No data available.
Please log in to see this content.
You have no subscription access to this content.
No metrics data to plot.
The attempt to load metrics for this article has failed.
The attempt to plot a graph for these metrics has failed.
Poly(3-hexylthiophene)/ZnO hybrid junctions for microelectronics applications
Rent:
Rent this article for
USD
10.1063/1.3114442
/content/aip/journal/apl/94/14/10.1063/1.3114442
http://aip.metastore.ingenta.com/content/aip/journal/apl/94/14/10.1063/1.3114442
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(a) Optical microscope image of an Al/ZnO/P3HT/Au crossbar array; in the inset a cross-point diode is shown. (b) Schematic of the diode cross section.

Image of FIG. 2.
FIG. 2.

(a) Cross-section SEM images of an Au/P3HT/ZnO structure (top image) and an Ag/ZnO/Al structure (bottom image). (b) ToF-SIMS profile of the ZnO/P3HT stack on Au substrate.

Image of FIG. 3.
FIG. 3.

(a) Typical current-voltage characteristics of a Al/ZnO/P3HT/Au device. In the inset the typical characteristics of an Au/P3HT/Al Schottky junction (Ref. 17) is presented for comparison. (b) Energy band diagram in nonequilibrium conditions of the Al/ZnO/P3HT/Au stack.

Loading

Article metrics loading...

/content/aip/journal/apl/94/14/10.1063/1.3114442
2009-04-06
2014-04-18
Loading

Full text loading...

This is a required field
Please enter a valid email address
752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Poly(3-hexylthiophene)/ZnO hybrid pn junctions for microelectronics applications
http://aip.metastore.ingenta.com/content/aip/journal/apl/94/14/10.1063/1.3114442
10.1063/1.3114442
SEARCH_EXPAND_ITEM