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Effects of capping on GaN quantum dots deposited on by molecular beam epitaxy
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10.1063/1.3115027
/content/aip/journal/apl/94/14/10.1063/1.3115027
http://aip.metastore.ingenta.com/content/aip/journal/apl/94/14/10.1063/1.3115027
/content/aip/journal/apl/94/14/10.1063/1.3115027
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/content/aip/journal/apl/94/14/10.1063/1.3115027
2009-04-10
2014-11-24
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Effects of capping on GaN quantum dots deposited on Al0.5Ga0.5N by molecular beam epitaxy
http://aip.metastore.ingenta.com/content/aip/journal/apl/94/14/10.1063/1.3115027
10.1063/1.3115027
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