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HRTEM images taken along the zone axis of (a) a surface GaN QD in the sample with 12 ML of 2D GaN deposited thickness and (b) a GaN QD capped by in the sample with a nominal 2D thickness of 8 ML of GaN. Both images have the same scale.
(a) HRTEM image along the zone axis of a surface GaN QD in the sample with 10 ML of GaN where the QD formation is not complete. (b) HRTEM image in two-beam condition of two neighboring GaN QDs buried in matrix for the same sample. Inset is an enlargement showing (0002) lattice fringes. Arrows indicate the characteristic contrast, bright above the QDs and dark between them. (c) Corresponding strain distribution map.
STEM-HAADF image of GaN QDs embedded in in the sample with 12 ML of 2D GaN deposited thickness.
Average QD height (deducting the wetting layer thickness), diameter, and volume as a function of the nominal GaN deposited thickness measured from HRTEM images. Errors were calculated as standard deviations within every data set. Note that the last column corresponds to a sample with an unfinished QD formation.
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