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Effects of capping on GaN quantum dots deposited on by molecular beam epitaxy
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10.1063/1.3115027
/content/aip/journal/apl/94/14/10.1063/1.3115027
http://aip.metastore.ingenta.com/content/aip/journal/apl/94/14/10.1063/1.3115027

Figures

Image of FIG. 1.
FIG. 1.

HRTEM images taken along the zone axis of (a) a surface GaN QD in the sample with 12 ML of 2D GaN deposited thickness and (b) a GaN QD capped by in the sample with a nominal 2D thickness of 8 ML of GaN. Both images have the same scale.

Image of FIG. 2.
FIG. 2.

(a) HRTEM image along the zone axis of a surface GaN QD in the sample with 10 ML of GaN where the QD formation is not complete. (b) HRTEM image in two-beam condition of two neighboring GaN QDs buried in matrix for the same sample. Inset is an enlargement showing (0002) lattice fringes. Arrows indicate the characteristic contrast, bright above the QDs and dark between them. (c) Corresponding strain distribution map.

Image of FIG. 3.
FIG. 3.

STEM-HAADF image of GaN QDs embedded in in the sample with 12 ML of 2D GaN deposited thickness.

Tables

Generic image for table
Table I.

Average QD height (deducting the wetting layer thickness), diameter, and volume as a function of the nominal GaN deposited thickness measured from HRTEM images. Errors were calculated as standard deviations within every data set. Note that the last column corresponds to a sample with an unfinished QD formation.

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/content/aip/journal/apl/94/14/10.1063/1.3115027
2009-04-10
2014-04-25
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Effects of capping on GaN quantum dots deposited on Al0.5Ga0.5N by molecular beam epitaxy
http://aip.metastore.ingenta.com/content/aip/journal/apl/94/14/10.1063/1.3115027
10.1063/1.3115027
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