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Size-dependent impurity activation energy in GaN nanowires
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10.1063/1.3115769
/content/aip/journal/apl/94/14/10.1063/1.3115769
http://aip.metastore.ingenta.com/content/aip/journal/apl/94/14/10.1063/1.3115769

Figures

Image of FIG. 1.
FIG. 1.

The experimentally measured conductivity (points) and the fits to Eq. (1) (curves) for (a) bare suspended GaN nanowires with 10, 14, and 20 nm radii, and for (b) coated GaN nanowires with 13.5, 18, and 48 nm radii. Each inset shows an SEM image and schematic representation of the dielectric configuration.

Image of FIG. 2.
FIG. 2.

The activation energies (points) from fitting with Eq. (1) for each nanowire vs the inverse wire radius, with the error in each energy. The curves are calculations from the FEM and were done with dielectric constants of 2.7 and 3.9 for comparison, as the coating was not thermally grown and hence could have a dielectric constant different from that of bulk .

Tables

Generic image for table
Table I.

Fitting parameters for (a) bare suspended and (b) coated nanowires. The energies are in meV and the conductivities are in .

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/content/aip/journal/apl/94/14/10.1063/1.3115769
2009-04-06
2014-04-16
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Size-dependent impurity activation energy in GaN nanowires
http://aip.metastore.ingenta.com/content/aip/journal/apl/94/14/10.1063/1.3115769
10.1063/1.3115769
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