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Doping tuned rectifying properties in heterojunctions
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10.1063/1.3115788
/content/aip/journal/apl/94/14/10.1063/1.3115788
http://aip.metastore.ingenta.com/content/aip/journal/apl/94/14/10.1063/1.3115788
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(a) Plotted results of for systematically strontium doped LSCO films with the phenomenological relation , and (b) shows the curves explored at the temperature range of 20–300 K, exhibiting good rectifying behavior, and inset in (b) blows up the details of .

Image of FIG. 2.
FIG. 2.

Diagrams for LSCO/NSTO at (a) and (b) .

Image of FIG. 3.
FIG. 3.

Hole doping controlled relations measured at (a) 300 K, (b) 200 K, (c) 100 K, and (d) 50 K. The insets in them magnify the details for Fermi level shift.

Image of FIG. 4.
FIG. 4.

relations of LSCO/NSTO, with in (a) and in (b) below , are both plotted by the standard approximately form describing superconducting gap. The evolution of extracted zero temperature gap of LSCO with is addressed in (c), which reveals a weak-coupling -wave BCS superconducting behavior of overdoped LSCO.

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/content/aip/journal/apl/94/14/10.1063/1.3115788
2009-04-10
2014-04-17
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Doping tuned rectifying properties in La2−xSrxCuO4/Nb:SrTiO3 heterojunctions
http://aip.metastore.ingenta.com/content/aip/journal/apl/94/14/10.1063/1.3115788
10.1063/1.3115788
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