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Anisotropy of In incorporation in GaN/InGaN multiquantum wells prepared by epitaxial lateral overgrowth
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10.1063/1.3115807
/content/aip/journal/apl/94/14/10.1063/1.3115807
http://aip.metastore.ingenta.com/content/aip/journal/apl/94/14/10.1063/1.3115807
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

HRXRD triple axis (0002) reflection pattern for the ELOG GaN/InGaN MQW structure.

Image of FIG. 2.
FIG. 2.

90 K MCL spectra taken in the laterally overgrown ELOG wing region (dash-dotted line) and in the normal growth ELOG window region (solid line); accelerating beam voltage 7 kV, the beam current was 1 nA.

Image of FIG. 3.
FIG. 3.

(a) 90 K MCL image of the MQW GaN/InGaN ELOG sample taken for the 460 nm MCL line; (b) the same for the 480 nm MCL line; the image size is 100 microns by 100 microns for both figures.

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/content/aip/journal/apl/94/14/10.1063/1.3115807
2009-04-06
2014-04-18
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Anisotropy of In incorporation in GaN/InGaN multiquantum wells prepared by epitaxial lateral overgrowth
http://aip.metastore.ingenta.com/content/aip/journal/apl/94/14/10.1063/1.3115807
10.1063/1.3115807
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