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Impact of oxide defects on band offset at interface
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10.1063/1.3115824
/content/aip/journal/apl/94/14/10.1063/1.3115824
http://aip.metastore.ingenta.com/content/aip/journal/apl/94/14/10.1063/1.3115824
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

The original and fitted Ge spectrum of dielectrics on .

Image of FIG. 2.
FIG. 2.

The valence-band and Ge spectra of Ge substrates with/without oxide overlayer: (a) bare Ge substrates, (b) Ge substrates with oxide overlayer prepared at for 50 min (photoelectron takeoff angle of 90°).

Image of FIG. 3.
FIG. 3.

The PDOS of with/without O vacancy: (a) total DOS of , (b) total DOS of with a vacancy, (c) the projected oxygen DOS of with a vacancy, and (d) the projected Ge DOS of with a O vacancy.

Image of FIG. 4.
FIG. 4.

Total DOS and PDOS of (a) , (b) with a Ge vacancy, and (c) with a Ge vacancy substituted by Hf atom.

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/content/aip/journal/apl/94/14/10.1063/1.3115824
2009-04-06
2014-04-18
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Impact of oxide defects on band offset at GeO2/Ge interface
http://aip.metastore.ingenta.com/content/aip/journal/apl/94/14/10.1063/1.3115824
10.1063/1.3115824
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