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The original and fitted Ge spectrum of dielectrics on .
The valence-band and Ge spectra of Ge substrates with/without oxide overlayer: (a) bare Ge substrates, (b) Ge substrates with oxide overlayer prepared at for 50 min (photoelectron takeoff angle of 90°).
The PDOS of with/without O vacancy: (a) total DOS of , (b) total DOS of with a vacancy, (c) the projected oxygen DOS of with a vacancy, and (d) the projected Ge DOS of with a O vacancy.
Total DOS and PDOS of (a) , (b) with a Ge vacancy, and (c) with a Ge vacancy substituted by Hf atom.
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