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Improvement of subthreshold current transport by contact interface modification in -type organic field-effect transistors
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/content/aip/journal/apl/94/14/10.1063/1.3115826
2009-04-06
2014-07-28

Abstract

The charge injection efficiency of organic field-effect transistors(OFETs) is found to be a critical factor determining the subthreshold characteristics of these devices. OFETs fabricated using a wide band gap organic semiconductor and gold source/drain contacts display large threshold voltage and poor subthreshold characteristics. Insertion of a metal-oxide charge injection layer at the contact/semiconductor interface lower the injection barrier height, resulting in marked improvements in threshold voltage and subthreshold slope and strong suppression of the short-channel effect. The improved subthreshold characteristics are attributed to enhanced charge injection and the consequent promotion of charge accumulation.

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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Improvement of subthreshold current transport by contact interface modification in p-type organic field-effect transistors
http://aip.metastore.ingenta.com/content/aip/journal/apl/94/14/10.1063/1.3115826
10.1063/1.3115826
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