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Resistive hysteresis and interface charge coupling in heterostructures
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10.1063/1.3116122
/content/aip/journal/apl/94/14/10.1063/1.3116122
http://aip.metastore.ingenta.com/content/aip/journal/apl/94/14/10.1063/1.3116122
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

hysteresis characteristics of a Pt/BTO/ZnO/Pt heterojunction. The bias voltage was swept as . Arrows indicate the direction of the sweep. The is 1, 2, 3, 4, and 5 V. For clarity each curve, starting from 2 V is shifted successively by one order of magnitude. The inset shows the schematic of Pt/BTO/ZnO/Pt heterostructure.

Image of FIG. 2.
FIG. 2.

The loops of our BTO/ZnO heterostructure at different temperatures. For clarity, the curve at is shifted upward by one (two) order of magnitude.

Image of FIG. 3.
FIG. 3.

The top panel of the figure shows the leakage current measurements as a function of time and applied voltage. The lower panel of the figure shows the voltage pulse sequence. The −2 and 0 V pulses were applied for 5 min, and the 5 and −5 V pulse were applied for one second each.

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/content/aip/journal/apl/94/14/10.1063/1.3116122
2009-04-07
2014-04-23
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Resistive hysteresis and interface charge coupling in BaTiO3-ZnO heterostructures
http://aip.metastore.ingenta.com/content/aip/journal/apl/94/14/10.1063/1.3116122
10.1063/1.3116122
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