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Distribution control of InAs quantum dots down to small numbers on truncated InP pyramids grown by selective area metal organic vapor phase epitaxy
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10.1063/1.3116146
/content/aip/journal/apl/94/14/10.1063/1.3116146
http://aip.metastore.ingenta.com/content/aip/journal/apl/94/14/10.1063/1.3116146
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

AFM images of the truncated InP pyramids together with schematic drawings with (a) square, (b) circular, and (c) triangular base. The scan fields are . (d) Sum of the areas of the {103} and {115} facets divided by the total pyramid top surface area as a function of the top surface area for various shapes: hexagonal, square with side along , circular, square with side along [001], elliptical with long axis along [011], elliptical with long axis along , and triangular. Blue and red lines indicate the trends for the elliptical (long axis along ) and square (side along [001]) base.

Image of FIG. 2.
FIG. 2.

AFM images of the truncated InP pyramids with InAs QDs grown on top for [(a) and (b)] square, (c) triangular, [(d) and (e)] circular, and [(f) and (g)] elliptical base. The scan fields are . (h) QD number as a function of the pyramid top surface area for various shapes: hexagonal, square with side along , circular, square with side along [001], elliptical with long axis along [011], elliptical with long axis along , and triangular. Blue and red lines indicate the trends for the elliptical (long axis along ) and square (side along [001])base.

Image of FIG. 3.
FIG. 3.

AFM images of the InP pyramids close to pinch off together with the magnified images of the InAs QDs on top for (a) elliptical, (b) triangular, (c) hexagonal, and (d) circular base. The scan fields are and . (e) Micro-PL spectrum taken at from a single capped InAs QD on a circular-based InP pyramid.

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/content/aip/journal/apl/94/14/10.1063/1.3116146
2009-04-08
2014-04-19
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Distribution control of 1.55μm InAs quantum dots down to small numbers on truncated InP pyramids grown by selective area metal organic vapor phase epitaxy
http://aip.metastore.ingenta.com/content/aip/journal/apl/94/14/10.1063/1.3116146
10.1063/1.3116146
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