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A schematic cross section of GaN-based LED with a GRIN structure.
Optical refractive index and transmittance of the films prepared by PECVD at deposition temperatures of 25 and . The inset figure shows the measured structure of the freestanding films.
Hydrophilicity of the films deposited at 25 and as a function of an external UV light irradiation time. The inset figures show the associated FTIR spectra and the surface morphology of the -deposited film.
Luminance intensity of the GaN-based LEDs with and without a GRIN structure. The inset figures show the associated electroluminescence spectra and the schematic light extraction from the GaN-based LED with porous layer.
Refractive index, porosity and film thickness of the films deposited onto the GaN-based LED.
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