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Strain measurements in -Si:C layers grown pseudomorphically on Si (001). (a) In-plane strain calculated from the experimental results obtained by different techniques and predicted values for fully substitutional alloys (Ref. 13). (b) obtained by Raman spectroscopy (triangles) and deduced from strain measurements (squares). The ratio is shown in the inset.
Critical layer thickness as a function of in -Si:C layers.
Weak-beam dark-field PV (001) image taken with showing the pyramidlike defects. CS (110) HRTEM image of a 3D pyramidlike defect is shown in inset.
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