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(a) SEM image of textured Si stamp for nanoimprinting. AFM images of P3HT:PCBM (b) before and (c) after nanoimprinting.
Current density vs voltage characteristics of devices with (solid) and without (dashed) nanoimprinting. Inset: IPCE spectra of both cells.
Variation of (a) open-circuit voltage , (b) short-circuit current density , (c) FF, and (d) device efficiency with imprinting pressure. The duration time of imprinting is . Samples imprinted by a plain Si wafer, textured Si [refer to Fig. 1(a)], and textured Si with fewer pyramids than (b) are shown as closed squares, closed triangles, and open triangles, respectively.
Raman spectra of P3HT:PCBM-based solar cells imprinted at different pressures.
Properties of P3HT:PCBM solar cells with and without nanoimprinting. Two different stamps were used in the imprinting of the cells. and are series resistance and shunt resistance, respectively, measured in the dark.
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