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Low-voltage InGaZnO thin-film transistors with gate insulator grown by atomic layer deposition
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10.1063/1.3118575
/content/aip/journal/apl/94/14/10.1063/1.3118575
http://aip.metastore.ingenta.com/content/aip/journal/apl/94/14/10.1063/1.3118575
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Capacitance density measured on a /Glass sample as a function of electric field at 1, 10, and 100 kHz. Current density measured on the same sample.

Image of FIG. 2.
FIG. 2.

Hysteresis transfer characteristics of TFTs with and (a) or (b); (c) dependence of subthreshold slope in the linear region for TFTs with and , and . (d) Output characteristics of a TFT.

Image of FIG. 3.
FIG. 3.

(a) Width-normalized contact resistance as a function of channel length and width-normalized channel resistance at a channel length of in the linear region for TFTs. (b) Transconductance and field-effect mobility vs. inverse of channel length in the linear region for TFTs.

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/content/aip/journal/apl/94/14/10.1063/1.3118575
2009-04-09
2014-04-18
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Low-voltage InGaZnO thin-film transistors with Al2O3 gate insulator grown by atomic layer deposition
http://aip.metastore.ingenta.com/content/aip/journal/apl/94/14/10.1063/1.3118575
10.1063/1.3118575
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