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Characteristics of InAs/InGaAs/GaAs quantum dot electroabsorption modulator
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10.1063/1.3119186
/content/aip/journal/apl/94/14/10.1063/1.3119186
http://aip.metastore.ingenta.com/content/aip/journal/apl/94/14/10.1063/1.3119186
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Normalized transmitted power as a function of reverse bias. The result was obtained for a wavelength of 1328 nm. Inset: FWHM of the fundamental absorption peak as a function of reverse bias. The blue line and dashed black lines are guides for the eyes.

Image of FIG. 2.
FIG. 2.

Calculated ground-state energy change of electron , heavy-hole , and the transition energy as a function of electric field (E-field).

Image of FIG. 3.
FIG. 3.

Illustration of the ground-state electron and heavy-hole wave functions at different electric field . Note that denote the flatband situation.

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/content/aip/journal/apl/94/14/10.1063/1.3119186
2009-04-10
2014-04-23
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Characteristics of 1.3 μm InAs/InGaAs/GaAs quantum dot electroabsorption modulator
http://aip.metastore.ingenta.com/content/aip/journal/apl/94/14/10.1063/1.3119186
10.1063/1.3119186
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