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High performance organic thin film transistor with phenyltrimethoxysilane-modified dielectrics
1.L. Herlogsson, Y. Y. Noh, N. Zhao, X. Crispin, H. Sirringlaus, and M. Berggren, Adv. Mater. 20, 4708 (2008).
9.Q. L. Bao, J. Li, C. M. Li, Z. L. Dong, Z. S. Lu, F. Qin, C. Gong, and J. Guo, J. Phys. Chem. B 112, 12270 (2008).
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In this work, fabrication of organic thin film transistors (OTFTs) using a phenyltrimethoxysilane (PhTMS) modified insulator greatly improves the device electrical properties over those with plain or octadecyltrichlorosilane (OTS) modified , particularly improves the carrier mobility, the subthreshold slope, and channel resistance resulted from reduced density of charge trapping states at the semiconductor/insulator interface. The pentacene OTFTs with modification from PhTMS (3.5‰ v/v) achieves carrier mobility of , on/off current ratio of , and subthreshold slope of 0.20 V/decade. This work renders a new, simple approach to significantly improve the OTFT performance.
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