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High performance organic thin film transistor with phenyltrimethoxysilane-modified dielectrics
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FIG. 1.

Output current vs drain as a function of for TC pentacene OTFTs with (a) PhTMS (2.3‰ v/v), (b) OTS (2.3‰ v/v) treated- and (c) pure gate and corresponding transfer characteristics, (d) and curve of square root of drain current vs gate voltage (e) for OTFT devices at . The channel length and width are 80 and , respectively.

Image of FIG. 2.

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FIG. 2.

(a) The transfer characteristics and (b) curve of square root of drain current vs gate voltage for OTFT devices with various PhTMS (2.3‰, 3.5‰, and 4.5‰ v/v) at .

Image of FIG. 3.

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FIG. 3.

Tapping mode AFM height images of thermally evaporation 40 nm thick pentacene on buffer layer treated insulators, (a) pure , (b) OTS (2.3‰ v/v) treated , (c) PhTMS (2.3‰ v/v) treated , (d) PhTMS (3.5‰ v/v) treated , and (e) PhTMS (4.5‰ v/v) treated . Mean grain sizes are about (a) 175 nm, (b) 190 nm, (c) 180 nm, (d) 360 nm, and (e) 170 nm, respectively. (f) Relationship between transistor total resistance vs channel length at −40 V gate voltage and −2 V drain-source voltage and (g) plot of channel resistance vs for OTFT devices with various buffer layer between pentacene and gate insulator and fixed of .

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/content/aip/journal/apl/94/15/10.1063/1.3115828
2009-04-16
2014-04-23

Abstract

In this work, fabrication of organic thin film transistors (OTFTs) using a phenyltrimethoxysilane (PhTMS) modified insulator greatly improves the device electrical properties over those with plain or octadecyltrichlorosilane (OTS) modified , particularly improves the carrier mobility, the subthreshold slope, and channel resistance resulted from reduced density of charge trapping states at the semiconductor/insulator interface. The pentacene OTFTs with modification from PhTMS (3.5‰ v/v) achieves carrier mobility of , on/off current ratio of , and subthreshold slope of 0.20 V/decade. This work renders a new, simple approach to significantly improve the OTFT performance.

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Scitation: High performance organic thin film transistor with phenyltrimethoxysilane-modified dielectrics
http://aip.metastore.ingenta.com/content/aip/journal/apl/94/15/10.1063/1.3115828
10.1063/1.3115828
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