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High performance organic thin film transistor with phenyltrimethoxysilane-modified dielectrics
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/content/aip/journal/apl/94/15/10.1063/1.3115828
2009-04-16
2014-09-19

Abstract

In this work, fabrication of organic thin film transistors (OTFTs) using a phenyltrimethoxysilane (PhTMS) modified insulator greatly improves the device electrical properties over those with plain or octadecyltrichlorosilane (OTS) modified , particularly improves the carrier mobility, the subthreshold slope, and channel resistance resulted from reduced density of charge trapping states at the semiconductor/insulator interface. The pentacene OTFTs with modification from PhTMS (3.5‰ v/v) achieves carrier mobility of , on/off current ratio of , and subthreshold slope of 0.20 V/decade. This work renders a new, simple approach to significantly improve the OTFT performance.

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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: High performance organic thin film transistor with phenyltrimethoxysilane-modified dielectrics
http://aip.metastore.ingenta.com/content/aip/journal/apl/94/15/10.1063/1.3115828
10.1063/1.3115828
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