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(a) A schematic illustration of a disk of diameter fabricated on a GaAs substrate. (b) A plot of vs of Eq. (2) for three different ’s. (c) A plot of vs for . The dashed line indicates from (a) for . (d) A plot of vs obtained from (b) with the approximation of Eq. (2).
Top-view SEM images of the as-grown sample at having (a) of infinity (no pattern), (b) , (c) , (d) , (e) , and (f) . In (f), the alignment and shape of masks are slightly degraded because of the fluctuation of dry etching at such small scales. It should be noted that the periodic circular shapes in (e) and (f) are , while those in (b) through (d) are GaAs.
A plot of vs from Table I with (square) and 6 (circle). For each measured at given , the corresponding Ga flux in Table I becomes . In the plot, the median for each in Table I was used.
Summary of NPG conditions.
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