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Ultrashort-period lateral composition modulation in TlInGaAsN/TlInP structures
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View: Figures


Image of FIG. 1.
FIG. 1.

[(a) and (b)] Cross-sectional bright-field TEM images and [(c) and (d)] electron diffraction patterns of TlInGaAsN/TlInP layers. The incidence direction of the electron beam is in [(a) and (c)] [110] and [(b) and (d)] .

Image of FIG. 2.
FIG. 2.

HAADF-STEM image of TlInGaAsP layer. For the imaging, a beam convergent angle of 10 mrad and an annular dark-field detector with an inner angle greater than 75 mrad was used. The TlInGaAsN layer is brighter than the TlInP one because As is heavier than P.

Image of FIG. 3.
FIG. 3.

[(a) and (b)] Pairwise atomic interactions at the topmost layer of an alloy. (a) Plain view and (b) cross-sectional view. and (blue) are group-III elements and (red) is a group-V element or vise versa. Black and white arrows reveal negative and positive interactions, respectively. [(c)–(e)] Formation process of like-atom chains along the growth direction. This illustration is the cross section of the (110) plane. Only group-III elements are drawn, and black and gray circles correspond to and atoms, respectively. Homonuclear atomic pairs in (c) become a seed of self-assembly in the next deposited monolayer in (d), because of the positive interaction . By repeating this procedure, like-atom chains along the growth direction are formed in (e).


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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Ultrashort-period lateral composition modulation in TlInGaAsN/TlInP structures