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ZnO tetrapod junction diodes
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10.1063/1.3119630
/content/aip/journal/apl/94/15/10.1063/1.3119630
http://aip.metastore.ingenta.com/content/aip/journal/apl/94/15/10.1063/1.3119630
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

SEM image of ZnO-T junction diode. The tetrapod nanocrystal is circled in red. scale bar shown. The inset shows an SEM image of the ZnO-T nanocrystal before lithographic processing. 500 nm scale bar shown.

Image of FIG. 2.
FIG. 2.

Heterostructure showing interface between -type ZnO and -type NiO semiconductor materials under reverse bias and UV illumination. Conduction and valence bands only are shown for clarity. Additional carriers are created at the interface due to impact-ionization of carriers accelerated by the potential at the interface. The energy gap, electron affinity, and work function for ZnO and NiO are as follows: , , , , , .

Image of FIG. 3.
FIG. 3.

Photoresponse of ZnO–NiO diode to continuous-wave UV excitation at 325 nm with increasing intensity up to .

Image of FIG. 4.
FIG. 4.

Spectral response of ZnO–NiO diode obtained using xenon lamp and monochromator configuration. The inset shows the position dependent photoresponse of a ZnO-T diode. The photocurrent is obtained as a 325 nm beam and is linearly scanned across the diode structure.

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/content/aip/journal/apl/94/15/10.1063/1.3119630
2009-04-16
2014-04-18
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: ZnO tetrapod p-n junction diodes
http://aip.metastore.ingenta.com/content/aip/journal/apl/94/15/10.1063/1.3119630
10.1063/1.3119630
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