Full text loading...
SEM image of ZnO-T junction diode. The tetrapod nanocrystal is circled in red. scale bar shown. The inset shows an SEM image of the ZnO-T nanocrystal before lithographic processing. 500 nm scale bar shown.
Heterostructure showing interface between -type ZnO and -type NiO semiconductor materials under reverse bias and UV illumination. Conduction and valence bands only are shown for clarity. Additional carriers are created at the interface due to impact-ionization of carriers accelerated by the potential at the interface. The energy gap, electron affinity, and work function for ZnO and NiO are as follows: , , , , , .
Photoresponse of ZnO–NiO diode to continuous-wave UV excitation at 325 nm with increasing intensity up to .
Spectral response of ZnO–NiO diode obtained using xenon lamp and monochromator configuration. The inset shows the position dependent photoresponse of a ZnO-T diode. The photocurrent is obtained as a 325 nm beam and is linearly scanned across the diode structure.
Article metrics loading...