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Structure of a GaN-based blue-violet laser diode with BS electrodes. The inset shows the operating circuit of the device. The front facet of the gain section and the rear facet of the SA section was coated with an antireflection film of 10% reflectivity and a high-reflection film of 95% reflectivity, respectively.
The relationship of the injected current and the optical output power and the injected current and the operated voltage with the reverse bias of applied to the SA section. The inset shows the relationship of the injected current and the operating voltage between the electrodes of the gain and SA section.
The microwave spectra at , 56, and 65 mW under .
The optical spectrum and the wave forms at , 56, and 65 mW under .
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