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Picosecond optical pulse generation from self-pulsating bisectional GaN-based blue-violet laser diodes
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10.1063/1.3106055
/content/aip/journal/apl/94/16/10.1063/1.3106055
http://aip.metastore.ingenta.com/content/aip/journal/apl/94/16/10.1063/1.3106055
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Structure of a GaN-based blue-violet laser diode with BS electrodes. The inset shows the operating circuit of the device. The front facet of the gain section and the rear facet of the SA section was coated with an antireflection film of 10% reflectivity and a high-reflection film of 95% reflectivity, respectively.

Image of FIG. 2.
FIG. 2.

The relationship of the injected current and the optical output power and the injected current and the operated voltage with the reverse bias of applied to the SA section. The inset shows the relationship of the injected current and the operating voltage between the electrodes of the gain and SA section.

Image of FIG. 3.
FIG. 3.

The microwave spectra at , 56, and 65 mW under .

Image of FIG. 4.
FIG. 4.

The optical spectrum and the wave forms at , 56, and 65 mW under .

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/content/aip/journal/apl/94/16/10.1063/1.3106055
2009-04-20
2014-04-18
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Picosecond optical pulse generation from self-pulsating bisectional GaN-based blue-violet laser diodes
http://aip.metastore.ingenta.com/content/aip/journal/apl/94/16/10.1063/1.3106055
10.1063/1.3106055
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