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Infrared photodiodes based on InAs quantum dots grown on 20 nm patterned GaAs
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10.1063/1.3111159
/content/aip/journal/apl/94/16/10.1063/1.3111159
http://aip.metastore.ingenta.com/content/aip/journal/apl/94/16/10.1063/1.3111159
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Figures

Image of FIG. 1.
FIG. 1.

(a) Schematic of pattern fabrication and nanopatterned growth in GaAs substrates. (b) Top view SEM and cross-section HRTEM image of a patterned GaAs substrate. (c) Top view SEM image of InAs QDs directly grown on a GaAs template revealing low pore filling. (d) Top view SEM image of InAs QDs grown on a patterned GaAs substrate subsequent to the deposition of a nucleation enhancing layer.

Image of FIG. 2.
FIG. 2.

(a) Schematic of a front-side illuminated device with a single layer of nanopatterned InAs quantum dots active layer. (b) Room temperature photoresponsivity in nanopatterned QD circular mesa as a function of wavelength at a reverse bias of 0.5 V.

Image of FIG. 3.
FIG. 3.

(a) Light and dark current densities in a nanopatterned QD circular mesa as a function of applied reverse bias at 32 K. (b) Corresponding multiplication factor, defined as , as a function of applied bias.

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/content/aip/journal/apl/94/16/10.1063/1.3111159
2009-04-23
2014-04-25
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Infrared p-i-n photodiodes based on InAs quantum dots grown on 20 nm patterned GaAs
http://aip.metastore.ingenta.com/content/aip/journal/apl/94/16/10.1063/1.3111159
10.1063/1.3111159
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