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Magnetoresistance curves for a MgO measured at approximately 300 and 9 K with a bias voltage of about 5 mV.
RHEED patterns along the azimuth of MgO (100). (a) Upper electrode with and , (b) a MgO tunnel barrier with and , and (c) lower electrode with and . (d) Intensity profile for (c) indicating the position by a dashed line.
Temperature dependence of , , and tunnel magnetoresistance ratio for the junction with the structure, where and are the resistance-area products for the antiparallel and parallel magnetization configurations.
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