1887
banner image
No data available.
Please log in to see this content.
You have no subscription access to this content.
No metrics data to plot.
The attempt to load metrics for this article has failed.
The attempt to plot a graph for these metrics has failed.
Improved tunnel magnetoresistance of magnetic tunnel junctions with Heusler electrodes fabricated by molecular beam epitaxy
Rent:
Rent this article for
USD
10.1063/1.3116717
/content/aip/journal/apl/94/16/10.1063/1.3116717
http://aip.metastore.ingenta.com/content/aip/journal/apl/94/16/10.1063/1.3116717
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Magnetoresistance curves for a MgO measured at approximately 300 and 9 K with a bias voltage of about 5 mV.

Image of FIG. 2.
FIG. 2.

RHEED patterns along the azimuth of MgO (100). (a) Upper electrode with and , (b) a MgO tunnel barrier with and , and (c) lower electrode with and . (d) Intensity profile for (c) indicating the position by a dashed line.

Image of FIG. 3.
FIG. 3.

Temperature dependence of , , and tunnel magnetoresistance ratio for the junction with the structure, where and are the resistance-area products for the antiparallel and parallel magnetization configurations.

Loading

Article metrics loading...

/content/aip/journal/apl/94/16/10.1063/1.3116717
2009-04-21
2014-04-17
Loading

Full text loading...

This is a required field
Please enter a valid email address
752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Improved tunnel magnetoresistance of magnetic tunnel junctions with Heusler Co2FeAl0.5Si0.5 electrodes fabricated by molecular beam epitaxy
http://aip.metastore.ingenta.com/content/aip/journal/apl/94/16/10.1063/1.3116717
10.1063/1.3116717
SEARCH_EXPAND_ITEM