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Shuttered RHEED oscillation behavior at the beginning [(a), (c), and (e)] and middle [(b), (d), and (f)] of the growth process of films with stoichiometric composition [(a) and (b)], strontium excess [(c) and (d)], and strontium deficiency [(e) and (f)].
Out-of-plane XRD data taken around the 200 peak of films with (a), −0.1 (b), 0 (c), 0.1 (d) and 0.2 (e). The vertical dashed line marks the 200 peak of the (100) substrate.
Comparison of out-of-plane lattice constant as a function of strontium excess in for sets of homoepitaxial films grown by MBE, PLD (Ref. 2 and 6), and rf magnetron sputtering (Ref. 5). The circles are from films grown by MBE in this study. The open circles were grown by codeposition, while the closed circles were grown by alternately shuttered monolayers.
STEM images of the interface between the (100) substrate and film for films with (a), −0.1 (b), 0 (c), 0.1 (d), and 0.2 (e). An arrow indicates the interface.
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