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Growth of homoepitaxial thin films by molecular-beam epitaxy
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10.1063/1.3117365
/content/aip/journal/apl/94/16/10.1063/1.3117365
http://aip.metastore.ingenta.com/content/aip/journal/apl/94/16/10.1063/1.3117365
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Shuttered RHEED oscillation behavior at the beginning [(a), (c), and (e)] and middle [(b), (d), and (f)] of the growth process of films with stoichiometric composition [(a) and (b)], strontium excess [(c) and (d)], and strontium deficiency [(e) and (f)].

Image of FIG. 2.
FIG. 2.

Out-of-plane XRD data taken around the 200 peak of films with (a), −0.1 (b), 0 (c), 0.1 (d) and 0.2 (e). The vertical dashed line marks the 200 peak of the (100) substrate.

Image of FIG. 3.
FIG. 3.

Comparison of out-of-plane lattice constant as a function of strontium excess in for sets of homoepitaxial films grown by MBE, PLD (Ref. 2 and 6), and rf magnetron sputtering (Ref. 5). The circles are from films grown by MBE in this study. The open circles were grown by codeposition, while the closed circles were grown by alternately shuttered monolayers.

Image of FIG. 4.
FIG. 4.

STEM images of the interface between the (100) substrate and film for films with (a), −0.1 (b), 0 (c), 0.1 (d), and 0.2 (e). An arrow indicates the interface.

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/content/aip/journal/apl/94/16/10.1063/1.3117365
2009-04-24
2014-04-19
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Growth of homoepitaxial SrTiO3 thin films by molecular-beam epitaxy
http://aip.metastore.ingenta.com/content/aip/journal/apl/94/16/10.1063/1.3117365
10.1063/1.3117365
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