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Schematic cross sections of (a) -type and (b) -type TFT. The figures describe substrate and layer materials, thickness, and deposition temperature. (c) Optical micrograph of a completed TFT with island width and source/drain length .
Transfer characteristics and gate leakage current of (a) -channel TFT and (b) -channel TFT. Output characteristics of (c) -channel TFT and (d) -channel TFT.
(a) Least-squares fit to the saturated regime of a -channel TFT. (b) Least-squares fits to the saturated and linear regimes of an -channel TFT.
Critically reviewed or accepted values for the carrier mobilities in . Symbols denote the band mobility , TOF drift mobility at room temperature , intrinsic field-effect mobility , and effective field-effect mobility .
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