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Amorphous silicon thin-film transistors with field-effect mobilities of for electrons and for holes
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10.1063/1.3119636
/content/aip/journal/apl/94/16/10.1063/1.3119636
http://aip.metastore.ingenta.com/content/aip/journal/apl/94/16/10.1063/1.3119636

Figures

Image of FIG. 1.
FIG. 1.

Schematic cross sections of (a) -type and (b) -type TFT. The figures describe substrate and layer materials, thickness, and deposition temperature. (c) Optical micrograph of a completed TFT with island width and source/drain length .

Image of FIG. 2.
FIG. 2.

Transfer characteristics and gate leakage current of (a) -channel TFT and (b) -channel TFT. Output characteristics of (c) -channel TFT and (d) -channel TFT.

Image of FIG. 3.
FIG. 3.

(a) Least-squares fit to the saturated regime of a -channel TFT. (b) Least-squares fits to the saturated and linear regimes of an -channel TFT.

Tables

Generic image for table
Table I.

Critically reviewed or accepted values for the carrier mobilities in . Symbols denote the band mobility , TOF drift mobility at room temperature , intrinsic field-effect mobility , and effective field-effect mobility .

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/content/aip/journal/apl/94/16/10.1063/1.3119636
2009-04-21
2014-04-21
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Amorphous silicon thin-film transistors with field-effect mobilities of 2 cm2/V s for electrons and 0.1 cm2/V s for holes
http://aip.metastore.ingenta.com/content/aip/journal/apl/94/16/10.1063/1.3119636
10.1063/1.3119636
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