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(a) Ga XPS spectrum for an As capped substrate following thermal desorption of the As cap. An oxygen and carbon free surface is produced allowing precise measurement of the position (1116.7 eV) and FWHM of the bulk peak. All XPS fits included a Shirley background subtraction. (b) Ga XPS spectrum of an substrate following decapping and deposition.
(a) Ga XPS spectrum for a treated GaAs substrate highlighting the location of the oxidation state. A small interfacial surface oxide is also present. (b) Ga core-level XPS spectrum of an substrate following decapping and e-beam evaporation of amorphous Si.
(a) Ga XPS spectrum of ALD deposited on a HF-last treated GaAs surface. The presence of and oxidation states are both detected. (b) curves from devices with the same interface as the sample from (a). (c) measurements performed at (100 Hz curves were removed due to equipment-induced noise).
(a) Ga XPS spectrum of HF-last GaAs with ex situ deposited PECVD amorphous Si followed by ALD deposition. The Si deposition removes the oxidation state while the oxidation state remains. (b) curves from devices with the same interface as the sample from (a). (c) measurements performed at . The frequency dispersion has been greatly reduced, demonstrating the correlation between the oxidation state and interface traps that pin the Fermi level for these systems.
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