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TFT devices based on ZnO NW networks. (a) Transfer characteristics for 5, 15, 20, and channel devices . TFT device consists of arrays of ZnO NWs whereas others are networks as indicated by the schematics inside the figure. (b) Output characteristics of a channel ZnO TFT. Gate voltages are marked on the curves. (c) Optical micrograph and SEM image of an actual device. The channel length is . (d) Mobility and ON/OFF ratios of TFT devices with respect to the channel length. ZnO NW density is fixed to . All electrical measurements were performed at ambient dark conditions with an Agilent 4156B semiconductor parameter analyzer.
Effect of NW density on the properties of TFT devices. (a) Transfer characteristics for different NW densities of 0.11, 0.17, 0.2, for channel devices . (b) Mobility and ON/OFF ratio of TFT devices with respect to the ZnO NW density in the network. TFT channel length is fixed to . (c) Transmittance as a function of wavelength (photon energy) for the different density ZnO NW networks.
Electrical characteristics of a TFT complementary inverter. (a) Transfer and (b) output characteristics for a channel SWNT network TFT. Drain-source voltages and gate voltages are marked on the curves, respectively. (c) Transfer characteristics of a back gated CMOS inverter fabricated by connecting -type SWNT TFT with -type ZnO NW TFT in the back gate geometry . Inset is the schematic of the CMOS inverter. (d) Optical micrograph of an actual device where Nb contacts of ZnO TFTs are overlapping Au contacts of SWNT TFTs.
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